Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric

Author

Yang, B. ; Ye, P.D. ; Kwo, J. ; Frei, M.R. ; Gossmann, H.-J.L. ; Mannaerts, J.P. ; Sergent, M. ; Hong, M. ; Ng, K. ; Bude, J.

Author_Institution

Agere Syst., Murray Hill, NJ, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

187

Lastpage

188

Abstract

Employing Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric on GaAs, prepared in a multi-chamber MBE system, has resulted in a low interfacial density of states (D/sub it/). The gate oxide is subjected to photoresists, solvents, water, and air before metallization, and as a consequence, contamination of the gate oxide is inevitable. The authors have studied the effects of gate oxide cleaning and etching before metallization on the DC and RF characteristics of depletion-mode GaAs MOSFETs with Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric.

Keywords

MIS structures; MOSFET; dielectric thin films; epitaxial layers; etching; gadolinium compounds; gallium compounds; interface states; metallisation; molecular beam epitaxial growth; surface cleaning; surface contamination; D-mode MOSFET; DC performance; Ga/sub 2/O/sub 3/; GaAs; Gd/sub 2/O/sub 3/; MBE-grown gate dielectric; RF performance; cleaning; depletion-mode MOSFET; etching; gate oxide contamination; interfacial density of states; metal/oxide interface; metallization; multi-chamber MBE system; Cleaning; Contamination; Dielectrics; Gallium arsenide; MOSFET circuits; Metallization; Radio frequency; Resists; Solvents; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037822

Filename

1037822