A study of defects in AlGaN/GaN heterostructures

Author

Na, J.H. ; Lee, H.S. ; Jeon, H.C. ; Jeong, Y.S. ; Park, C.J. ; Park, Y.S. ; Cho, H.Y. ; Kang, T.W. ; Oh, J.E. ; Chung, K.S. ; Lee, K.H.

Author_Institution

Dept. of Phys., Dongguk Univ., Seoul, South Korea

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

189

Lastpage

190

Abstract

The authors study defects in AlGaN/GaN heterostructures using DLTS. The AlGaN/GaN heterostructures used were grown by RF-plasma assisted molecular beam epitaxy (PA-MBE) on sapphire substrates. The Al mole fraction was kept at 0.2 for all the AlGaN layers. Two electron traps were detected. The trap levels are E/sub c/-0.15eV and E/sub c/-0.25eV, respectively. These traps are attributed to point defects and dislocations through analysing DLTS features such as the measured fill pulse time. The trap related to the dislocation was reduced by annealing.

Keywords

III-V semiconductors; aluminium compounds; deep level transient spectroscopy; defect states; electron traps; gallium compounds; plasma deposited coatings; semiconductor epitaxial layers; semiconductor heterojunctions; wide band gap semiconductors; Al mole fraction; Al/sub 2/O/sub 3/; AlGaN-GaN; AlGaN/GaN heterostructures; DLTS; RF-PA-MBE; RF-plasma assisted molecular beam epitaxy; defects; dislocations; electron traps; point defects; sapphire substrates; Aluminum gallium nitride; Annealing; Electron traps; Gallium nitride; Physics; Pulse measurements; Temperature dependence; Time measurement; Voltage; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037823

Filename

1037823