Title :
Modulated beam growth and interface control in III-AsSb laser heterostructures
Author :
Kaspi, R. ; Ongstad, A.P. ; Dente, G.C. ; Weimer, M.
Author_Institution :
Directed Energy Directorate, Air Force Res. Lab., Albuquerque, NM, USA
Abstract :
The molecular beam epitaxy of advanced heterostructures containing mixed arsenide/ antimonide layers presents a number of special challenges. A 5 /spl mu/m thick laser designed to emit mid-infrared radiation of 4 /spl mu/m wavelength, for example, may incorporate thick (/spl sim/2 /spl mu/m) lattice-matched AlGaAsSb layers for optical confinement, thinner (/spl sim/0.1 /spl mu/m) lattice-matched InGaAsSb layers for electrical confinement, and extremely thin (/spl sim/20 /spl Aring/) InAs and InGaSb layers as quantum wells. Such structures highlight the need for precise control of alloy composition over time on the one hand, and reproducible manipulation of the interfacial chemistry across very thin III-As and III-Sb layers on the other.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; interface phenomena; molecular beam epitaxial growth; photoluminescence; quantum well lasers; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; AlGaAsSb; III-AsSb laser heterostructures interface control; InAs-GaSb; conventional MBE; electrical confinement; interfacial chemistry; molecular beam epitaxy; optical confinement; quantum wells; thick lattice matched AlGaAsSb layers; Digital alloys; Laser beams; Molecular beam epitaxial growth; Optical control; Optical modulation; Optical sensors; Quantum well lasers; Stimulated emission; Surface emitting lasers; Surface morphology;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037826
