Title :
A novel program-erasable high-k AlN capacitor with memory function
Author :
Chin, Albert ; Lai, C.H. ; Hung, B.F. ; Cheng, C.F. ; McAlister, Sean P. ; Zhu, Chunxiang ; Li, Ming-Fu ; Kwong, Dim-Lee
Abstract :
We demonstrate, for the first time, a novel high-k AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other capacitors that use only a single high-k dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after ±4V program/erase for 104sec.
Keywords :
MIS capacitors; aluminium compounds; dielectric thin films; field effect memory circuits; flash memories; 0.06 V; 1E4 s; 1T1C memory; AlN-Si; data retention; high dielectric constant; high-k dielectric layer; memory function; program-erasable high-k AlN capacitor; CMOS technology; Capacitors; Electron traps; High K dielectric materials; High-K gate dielectrics; MONOS devices; Nonvolatile memory; Random access memory; SONOS devices; Threshold voltage;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
DOI :
10.1109/NVMT.2004.1380793
