• DocumentCode
    2322100
  • Title

    A novel program-erasable high-k AlN capacitor with memory function

  • Author

    Chin, Albert ; Lai, C.H. ; Hung, B.F. ; Cheng, C.F. ; McAlister, Sean P. ; Zhu, Chunxiang ; Li, Ming-Fu ; Kwong, Dim-Lee

  • fYear
    2004
  • fDate
    15-17 Nov. 2004
  • Firstpage
    18
  • Lastpage
    23
  • Abstract
    We demonstrate, for the first time, a novel high-k AlN capacitor that is program-erasable at voltages of +4 or -4 V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other capacitors that use only a single high-k dielectric layer. Good data retention is shown with a threshold shift of only 0.06V after ±4V program/erase for 104sec.
  • Keywords
    MIS capacitors; aluminium compounds; dielectric thin films; field effect memory circuits; flash memories; 0.06 V; 1E4 s; 1T1C memory; AlN-Si; data retention; high dielectric constant; high-k dielectric layer; memory function; program-erasable high-k AlN capacitor; CMOS technology; Capacitors; Electron traps; High K dielectric materials; High-K gate dielectrics; MONOS devices; Nonvolatile memory; Random access memory; SONOS devices; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2004
  • Print_ISBN
    0-7803-8726-0
  • Type

    conf

  • DOI
    10.1109/NVMT.2004.1380793
  • Filename
    1380793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2322100