Structure and composition of (GaIn)(NAsSb)/GaAs multi quantum well structures grown by MBE

Author

Volz, K. ; Gambin, V. ; Ha, W. ; Wistey, M. ; Harris, J.S.

Author_Institution

Solid State Photonics Lab., Stanford Univ., CA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

201

Lastpage

202

Abstract

Mixed III-V nitride semiconductor alloys have a theoretically predicted large bandgap bowing, which would allow 1.3 to 1.55 /spl mu/m wavelength emission. In this study, the novel quaternary (GaIn)(NAs) and pentenary (GaIn)(NAsSb) material systems were grown compressively strained on GaAs substrates at low substrate temperatures by MBE.

Keywords

III-V semiconductors; X-ray diffraction; energy gap; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; (GaIn)(NAsSb)-GaAs; (GaIn)(NAsSb)/GaAs multi quantum well structures; 1.3 to 1.55 micron; GaAs; MBE; bandgap bowing; composition; high resolution X-ray diffraction; high resolution transmission electron microscopy; high-quality structures; miscibility gap; phase separation effects; Capacitive sensors; Composite materials; Crystalline materials; Gallium arsenide; Photonic band gap; Quantum well devices; Semiconductor materials; Solid state circuits; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037829

Filename

1037829