Potential of SOI power MOSFETs as a switching device for megahertz DC/DC converters

Author

Sakai, T. ; Matsumoto, S. ; Kim, I.J. ; Fukumitsu, T. ; Yachi, T.

Author_Institution

NTT Interdisciplinary Res. Labs., Tokyo, Japan

fYear

1994

fDate

20-25 Jun 1994

Firstpage

450

Abstract

Switching characteristics of a power MOSFET formed on a silicon-on-insulator (SOI) substrate are analyzed by device simulation including the external circuit. The SOI power MOSFET is shown to have shorter turn-on and turn-off times than the corresponding MOSFET. Experiments are carried out on a prototype SOI power MOSFET, and good agreement is obtained between the simulation and the experiment. The SOI power MOSFET is shown to be a promising switching device for DC/DC converters operating at several megahertz

Keywords

circuit analysis computing; digital simulation; elemental semiconductors; power convertors; power transistors; semiconductor device models; semiconductor switches; semiconductor-insulator boundaries; silicon; substrates; switching circuits; Si; VDMSOFET; device simulation; external circuit; megahertz DC/DC converters; power MOSFET; silicon-on-insulator substrate; switching device; turn-off time; turn-on time; Analytical models; Circuit simulation; DC-DC power converters; MOSFETs; Medical simulation; Parasitic capacitance; Silicon on insulator technology; Switching circuits; Switching converters; Virtual prototyping; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE

Conference_Location

Taipei

Print_ISBN

0-7803-1859-5

Type

conf

DOI

10.1109/PESC.1994.349696

Filename

349696