Enhanced CHISEL programming in flash memory devices with SiGe buried layer

Author

Weltzer, L.M. ; Banerjee, S.K.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2004

fDate

15-17 Nov. 2004

Firstpage

31

Lastpage

33

Abstract

A buried SiGe layer is used to increase the secondary impact ionization (SII) rate and therefore enhance the channel-initiated secondary electron (CHISEL) gate current in NOR flash electrically erasable and programmable read-only memory (EEPROM) devices. Electrical characterization of planar flash cells with a nanocrystal quantum dot floating gate shows a greater than 3×enhancement in the CHISEL component of the threshold voltage shift for devices with the SiGe layer compared to devices without.

Keywords

Ge-Si alloys; NOR circuits; PLD programming; elemental semiconductors; flash memories; NOR flash; SiGe; SiGe buried layer; channel-initiated secondary electron gate current; electrically erasable programmable read-only memory devices; enhanced CHISEL programming; flash memory devices; nanocrystal quantum dot floating gate; planar flash cells; secondary impact ionization rate; threshold voltage shift; EPROM; Electrons; Flash memory; Germanium silicon alloys; Impact ionization; Nanocrystals; Nonvolatile memory; PROM; Quantum dots; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2004

Print_ISBN

0-7803-8726-0

Type

conf

DOI

10.1109/NVMT.2004.1380798

Filename

1380798