Title :
Enhanced CHISEL programming in flash memory devices with SiGe buried layer
Author :
Weltzer, L.M. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A buried SiGe layer is used to increase the secondary impact ionization (SII) rate and therefore enhance the channel-initiated secondary electron (CHISEL) gate current in NOR flash electrically erasable and programmable read-only memory (EEPROM) devices. Electrical characterization of planar flash cells with a nanocrystal quantum dot floating gate shows a greater than 3×enhancement in the CHISEL component of the threshold voltage shift for devices with the SiGe layer compared to devices without.
Keywords :
Ge-Si alloys; NOR circuits; PLD programming; elemental semiconductors; flash memories; NOR flash; SiGe; SiGe buried layer; channel-initiated secondary electron gate current; electrically erasable programmable read-only memory devices; enhanced CHISEL programming; flash memory devices; nanocrystal quantum dot floating gate; planar flash cells; secondary impact ionization rate; threshold voltage shift; EPROM; Electrons; Flash memory; Germanium silicon alloys; Impact ionization; Nanocrystals; Nonvolatile memory; PROM; Quantum dots; Silicon germanium;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
DOI :
10.1109/NVMT.2004.1380798
