Title :
The effect of thermal performance on device current utilisation
Author :
Robinson, F.V.P.
Author_Institution :
Sch. of Electron. & Electr. Eng., Bath Univ., UK
Abstract :
A significant improvement in power semiconductor device utilisation seems possible if the maximum output current of power stages could be limited by thermal feedback from the power converter. To illustrate the potential utilisation benefit obtained in main switching devices, the variation in usable current with operating conditions is examined for several devices applied in a constant frequency PWM VVVF inverter, and operated under conditions to keep their junction temperature constant
Keywords :
electric current control; feedback; insulated gate bipolar transistors; insulated gate field effect transistors; invertors; power convertors; power transistors; pulse width modulation; semiconductor device models; semiconductor switches; switching circuits; temperature control; BJT; IGBT; MOSFET; constant frequency PWM VVVF inverter; current utilisation; junction temperature; maximum output current; power converter; power semiconductor device; power stages; switching devices; thermal feedback; thermal performance; Electronic equipment testing; Equations; Equivalent circuits; Frequency; Frequency estimation; Output feedback; Power semiconductor devices; Power semiconductor switches; Pulse width modulation inverters; Reliability; Temperature; Thermal engineering; Thermal resistance;
Conference_Titel :
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location :
Taipei
Print_ISBN :
0-7803-1859-5
DOI :
10.1109/PESC.1994.349699
