DocumentCode :
2322264
Title :
Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
Author :
Georgakilas, Georgakilas ; Dimakis, E. ; Androulidaki, M. ; Tsagaraki, K. ; Kittler, G. ; Bellet-Almaric, E. ; Jalabert, D. ; Pelekanos, N.T.
Author_Institution :
Foundation for Research and Technology-Hellas
fYear :
2002
fDate :
15-20 Sept. 2002
Firstpage :
213
Lastpage :
214
Abstract :
We report on the growth by rf plasma-assisted molecular beam epitaxy (RF-MBE) of high quality quatemary InxAl1-xGa1-x-yN/GaN quantum well (QW) heterostructures, showing room temperature photoluminescence and lasing under optical pumping.
Keywords :
Gallium alloys; Gallium nitride; Molecular beam epitaxial growth; Optical pumping; Photoluminescence; Plasma temperature; Quantum well devices; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037835
Filename :
1037835
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2322264
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