Structure stability of short-period InAs/AlSb superlattices

There is considerable interest in InAs/AlSb heterostructure both for the exploration of the physics and for their practical applications. Based on InAs/GaSb/AlSb heterostructures, significant progress in the development of midinfrared lasers, very long wavelength infrared photodetectors, resonant tunneling diodes, and field effect transistors has been achieved. Many studies have been carried out in the growth, interface properties, and electrical and optical characteristics of the InAs/AlSb structures. The structure stability of InAs/GaSb/AlSb heterostructures is crucial for the performance of final devices. Furthermore, short-period SLs offer a possibility,to study diffusion processes on a scale of the period length. At present, the effect of annealing on the structure properties of the InAs/AlSb superlattices must be determined, because the quality of interfaces after any heat treatment may modify the physical properties of the structure.