DocumentCode
2322390
Title
Non-polar III-nitride heterostructures
Author
Ng, H.M.
Author_Institution
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
229
Lastpage
230
Abstract
III-nitride quantum heterostructures have gained tremendous interest due to the feasibility of attaining visible and ultraviolet light emission. However, the internal quantum efficiency of such optical devices is limited by built-in electrostatic fields which induce a separation of the electron and hole wavefunctions. The reduced wavefunction overlap translates to a decrease in the radiative transition probability. Furthermore, a redshift of the emission wavelength occurs due the quantum-confined Stark effect. Both these effects are a consequence of the large spontaneous and piezoelectric polarization along the growth axis (which is the singular polar axis) in wurtzite III-nitride heterostructures.
Keywords
III-V semiconductors; X-ray diffraction; light polarisation; molecular beam epitaxial growth; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; III-nitride quantum heterostructures; built-in electrostatic fields; electron wavefunctions; emission wavelength; growth axis; hole wavefunctions; internal quantum efficiency; nonpolar III-nitride heterostructures; optical devices; piezoelectric polarization; quantum-confined Stark effect; radiative transition probability; redshift; singular polar axis; spontaneous polarization; ultraviolet light emission; visible light emission; wavefunction overlap; wurtzite III-nitride heterostructures; Charge carrier processes; Electrostatics; Gallium nitride; Optical devices; Photoluminescence; Piezoelectric polarization; Quantum well devices; Stark effect; Temperature measurement; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037843
Filename
1037843
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