Title :
Non-polar III-nitride heterostructures
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
III-nitride quantum heterostructures have gained tremendous interest due to the feasibility of attaining visible and ultraviolet light emission. However, the internal quantum efficiency of such optical devices is limited by built-in electrostatic fields which induce a separation of the electron and hole wavefunctions. The reduced wavefunction overlap translates to a decrease in the radiative transition probability. Furthermore, a redshift of the emission wavelength occurs due the quantum-confined Stark effect. Both these effects are a consequence of the large spontaneous and piezoelectric polarization along the growth axis (which is the singular polar axis) in wurtzite III-nitride heterostructures.
Keywords :
III-V semiconductors; X-ray diffraction; light polarisation; molecular beam epitaxial growth; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; III-nitride quantum heterostructures; built-in electrostatic fields; electron wavefunctions; emission wavelength; growth axis; hole wavefunctions; internal quantum efficiency; nonpolar III-nitride heterostructures; optical devices; piezoelectric polarization; quantum-confined Stark effect; radiative transition probability; redshift; singular polar axis; spontaneous polarization; ultraviolet light emission; visible light emission; wavefunction overlap; wurtzite III-nitride heterostructures; Charge carrier processes; Electrostatics; Gallium nitride; Optical devices; Photoluminescence; Piezoelectric polarization; Quantum well devices; Stark effect; Temperature measurement; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037843