DocumentCode :
2322396
Title :
Integrated reliability in EEPROM nonvolatile memory cell design
Author :
Canet, P. ; Lalande, F. ; Razafindramora, J. ; Bouquet, V. ; Postel-Pellerin, J. ; Bouchakour, R. ; Mirabel, J.M.
Author_Institution :
L2MP-polytech UMR, Marseille, France
fYear :
2004
fDate :
15-17 Nov. 2004
Firstpage :
66
Lastpage :
69
Abstract :
We propose a new way to design new memory cells assisted with a physical model taking into account reliability. First, we study the coupling ratio impact on the electric field and its consequences on cell hardness. The choice of coupling ratio in a new cell design should result from a compromise between a high Ke value in order to use low supply voltages and reduce the charge pump area, and low Ke value to increase the cell´s endurance. Secondly, we investigate the Fowler-Nordheim parameters evolution with operating cycling stress. The experimental measurements necessary to extract these parameters turn out to be more stressing than the operating stress. We propose a new extraction process based on a two-point nonstressing measurement method. At last, the best way to design a robust cell should be to include this degradation effect in the model.
Keywords :
EPROM; dielectric properties; integrated circuit design; integrated circuit reliability; low-power electronics; EEPROM nonvolatile memory cell design; Fowler-Nordheim parameters; cell hardness; charge pump area reduction; coupling ratio impact; degradation effect; high Ke value; integrated design reliability; low supply voltage; operating cycling stress; robust cell design; tunneling; two-point nonstressing measurement method; Capacitance; Character generation; Charge pumps; Degradation; EPROM; Low voltage; Nonvolatile memory; Predictive models; Robustness; Stress measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
Type :
conf
DOI :
10.1109/NVMT.2004.1380806
Filename :
1380806
Link To Document :
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