DocumentCode :
2322434
Title :
InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with enhanced optical gain
Author :
Kovsh, A.R. ; Maleev, N.A. ; Zhukov, A.E. ; Mikhrin, S.S. ; Vasil, A.P. ; Shernyakov, Yu.M. ; Maximov, M.V. ; Livshits, D.A. ; Ustinov, V.M. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fYear :
2002
fDate :
15-20 Sept. 2002
Firstpage :
237
Lastpage :
238
Abstract :
The need for long-wavelength cost-efficient GaAs-based lasers is currently a powerful driving force in the development of new GaAs-based heterostructures. 1.3-/spl mu/m lasers based on self-organized InAs quantum dots (QDs) embedded into InGaAs quantum well (QW) have demonstrated very low threshold current density (16 A/cm/sup 2/). On the other hand, low surface density of such QDs that provides the low transparency current density may also result in a small maximum optical gain on QD ground state. This motivated the use of low-loss cavity design (very ong cavities and/or HR/HR facet coatings), which is characterized by low external differential efficiency, /spl eta//sub D/, and output power. Previously the use of triply-stacked array of long-wavelength QDs allowed us to achieve /spl eta//sub D/ of 57% for edge-emitting lasers and realize 1.3-/spl mu/m VCSEL utilizing highly-reflective AlO/GaAs distributed Bragg reflectors. Further enhancement of optical gain of such QDs should improve efficiency of laser diodes as well as open new possibilities for their VCSEL application. However, increase in a number of QD planes, that results in corresponding increase of the saturated gain, typically led to degradation of threshold current and internal quantum efficiency of 1.3-/spl mu/m-QD lasers.
Keywords :
Bragg gratings; III-V semiconductors; current density; gallium arsenide; indium compounds; quantum dot lasers; surface emitting lasers; 1.3 micron; GaAs-based heterostructures. lasers; InAs-InGaAs; InAs/InGaAs/GaAs quantum dot lasers; InGaAs quantum well; InGaAs-GaAs; current density; driving force; edge-emitting lasers; external differential efficiency; facet coatings; highly-reflective AlO/GaAs distributed Bragg reflectors; long-wavelength cost-efficient GaAs-based lasers; low-loss cavity design; optical gain; output power; quantum dots ground state; self-organized InAs quantum dots; surface density; transparency; triply-stacked array; vertical cavity surface emitting laser; Current density; Gallium arsenide; Indium gallium arsenide; Optical saturation; Power lasers; Quantum dot lasers; Quantum well lasers; Threshold current; Time of arrival estimation; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037847
Filename :
1037847
Link To Document :
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