Title :
GaAs-based red-emitting InAlAs/AlGaAs quantum dots and quantum-dot laser
Author :
Liu, H.Y. ; Airey, R.J. ; Steer, M.J. ; Houston, P.A. ; Sellers, Ian R. ; Mowbray, D.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
Semiconductor quantum dots (QDs) are the subject of extensive study due to their promising applications in novel optoelectronics devices. However relatively few studies of red-emitting QDs have been reported due mainly to the difficulty in fabricating high-quality InAlAs/AlGaAs on GaAs substrates. We study the effect of growth temperature on the optical and structural properties of InAlAs/AlGaAs QDs. With increasing substrate temperature from 530 to 560/spl deg/C, a significant improvement in the QD material quality is observed. In addition at room temperature, ground state lasing is demonstrated for a laser with six InAlAs/AlGaAs QD layers grown at 560/spl deg/C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; 530 to 560 degC; GaAs; GaAs substrates; GaAs-based red-emitting InAlAs/AlGaAs quantum dot laser; InAlAs-AlGaAs; ground state lasing; optoelectronics devices; quantum dots material quality; substrate temperature; Astronomy; Indium compounds; Land surface temperature; Light emitting diodes; Quantum dot lasers; Quantum dots; Spontaneous emission; Substrates; Threshold current; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037848
