Thermal modelling and simulation of non-volatile and non-rotating phase change memory cell

Author

Shi, L.P. ; Chong, T.C. ; Li, J.M. ; Koh, Darry S C ; Zhao, R. ; Yang, H.X. ; Tan, P.K. ; Wei, X.Q. ; Song, W.D.

Author_Institution

Data Storage Inst., Singapore, Singapore

fYear

2004

fDate

15-17 Nov. 2004

Firstpage

83

Lastpage

87

Abstract

A thermal analysis of chalcogenide random access memory (C-RAM) cell, a non-rotational nonvolatile phase change memory cell, was conducted. A three-dimensional finite-element method was used in the simulation of C-RAM cell. The thermal effect generated by applying an electric pulse was calculated and analyzed. The dependence of its thermal performances due to electrical and geometrical variations was also investigated. Temperature performances including temperature profiles and history, the heating and cooling rates, and heat flow characteristics were obtained and analyzed.

Keywords

amorphous semiconductors; circuit simulation; finite element analysis; random-access storage; semiconductor device models; 3D finite-element method; CRAM cell; chalcogenide random access memory; cooling rates; device simulation; electrical variations; geometrical variations; heat flow characteristics; heating rates; nonrotating phase change memory cell; nonvolatile memory; nonvolatile solid state memory; phase change thin films; temperature history; temperature profiles; thermal modelling; thermal performances; Cooling; Finite element methods; Heating; History; Nonvolatile memory; Phase change memory; Pulse generation; Random access memory; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2004

Print_ISBN

0-7803-8726-0

Type

conf

DOI

10.1109/NVMT.2004.1380811

Filename

1380811