Title :
Thermal modelling and simulation of non-volatile and non-rotating phase change memory cell
Author :
Shi, L.P. ; Chong, T.C. ; Li, J.M. ; Koh, Darry S C ; Zhao, R. ; Yang, H.X. ; Tan, P.K. ; Wei, X.Q. ; Song, W.D.
Author_Institution :
Data Storage Inst., Singapore, Singapore
Abstract :
A thermal analysis of chalcogenide random access memory (C-RAM) cell, a non-rotational nonvolatile phase change memory cell, was conducted. A three-dimensional finite-element method was used in the simulation of C-RAM cell. The thermal effect generated by applying an electric pulse was calculated and analyzed. The dependence of its thermal performances due to electrical and geometrical variations was also investigated. Temperature performances including temperature profiles and history, the heating and cooling rates, and heat flow characteristics were obtained and analyzed.
Keywords :
amorphous semiconductors; circuit simulation; finite element analysis; random-access storage; semiconductor device models; 3D finite-element method; CRAM cell; chalcogenide random access memory; cooling rates; device simulation; electrical variations; geometrical variations; heat flow characteristics; heating rates; nonrotating phase change memory cell; nonvolatile memory; nonvolatile solid state memory; phase change thin films; temperature history; temperature profiles; thermal modelling; thermal performances; Cooling; Finite element methods; Heating; History; Nonvolatile memory; Phase change memory; Pulse generation; Random access memory; Temperature; Thermal conductivity;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
DOI :
10.1109/NVMT.2004.1380811
