DocumentCode
2322471
Title
Improved performance of MBE grown quantum dot lasers with asymmetric dots in a well design emitting near 1.3 /spl mu/m
Author
Krebs, R. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Wurzburg Univ., Germany
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
241
Lastpage
242
Abstract
Quantum dots emitting in the 1.3 /spl mu/m wavelength region can be realized following the dots in a well (DWELL) concept. By optimization of growth parameters as e.g. the V/III ratio and the design of the dot layers we could achieve a significant improvement of the dot characteristics as well as of the laser performance.
Keywords
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum dot lasers; semiconductor growth; 1.3 micron; InAs-GaInAs; InAs/GaInAs quantum dot lasers; V/III ratio; asymmetric dots; dot characteristics; dot layers; dots in a well concept; growth parameters; laser performance; molecular beam epitaxial grown quantum dot lasers; optimization; wavelength region; well design; Design optimization; Gallium arsenide; Optical design; Optical waveguides; Quantum dot lasers; Quantum dots; Quantum well lasers; Threshold current; US Department of Transportation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037849
Filename
1037849
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