DocumentCode :
2322486
Title :
Universal HSPICE model for chalcogenide based phase change memory elements
Author :
Wei, X.Q. ; Shi, L.P. ; Zhao, R. ; Miao, X.S. ; Chong, T.C. ; Rajan, W. ; Quek, B.S.
Author_Institution :
Data Storage Inst., Singapore, Singapore
fYear :
2004
fDate :
15-17 Nov. 2004
Firstpage :
88
Lastpage :
91
Abstract :
We present a two terminal HSpice model for chalcogenide based phase change memory (CRAM) element. By including physical models of CRAM programming, this model can simulate not only the resistance change by different electrical pulses, but also temperature profile and crystalline fraction during the operation. Furthermore, it was successfully integrated with standard W/R circuit in memory technology. Output of sense amplifier vs writing current amplitude figure corresponded well with the typical R-I curve of CRAM elements.
Keywords :
SPICE; amorphous semiconductors; random-access storage; CRAM programming; R-I curve; chalcogenide based phase change memory elements; crystalline fraction; electrical pulses; nonvolatile memory; resistance change; sense amplifier; temperature profile; universal HSPICE model; writing current amplitude; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Electric resistance; Nonvolatile memory; Phase change materials; Phase change memory; Switches; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Print_ISBN :
0-7803-8726-0
Type :
conf
DOI :
10.1109/NVMT.2004.1380812
Filename :
1380812
Link To Document :
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