Universal HSPICE model for chalcogenide based phase change memory elements

Author

Wei, X.Q. ; Shi, L.P. ; Zhao, R. ; Miao, X.S. ; Chong, T.C. ; Rajan, W. ; Quek, B.S.

Author_Institution

Data Storage Inst., Singapore, Singapore

fYear

2004

fDate

15-17 Nov. 2004

Firstpage

88

Lastpage

91

Abstract

We present a two terminal HSpice model for chalcogenide based phase change memory (CRAM) element. By including physical models of CRAM programming, this model can simulate not only the resistance change by different electrical pulses, but also temperature profile and crystalline fraction during the operation. Furthermore, it was successfully integrated with standard W/R circuit in memory technology. Output of sense amplifier vs writing current amplitude figure corresponded well with the typical R-I curve of CRAM elements.

Keywords

SPICE; amorphous semiconductors; random-access storage; CRAM programming; R-I curve; chalcogenide based phase change memory elements; crystalline fraction; electrical pulses; nonvolatile memory; resistance change; sense amplifier; temperature profile; universal HSPICE model; writing current amplitude; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Electric resistance; Nonvolatile memory; Phase change materials; Phase change memory; Switches; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2004

Print_ISBN

0-7803-8726-0

Type

conf

DOI

10.1109/NVMT.2004.1380812

Filename

1380812