DocumentCode
2322492
Title
Room temperature 1.3 /spl mu/m emission from self-assembled GaAs/GaSb quantum dots
Author
Farrer, I. ; Murphy, M.J. ; Thompson, R.M. ; Beattie, N.S. ; Ritchie, D.A. ; Shields, A.J.
Author_Institution
Cavendish Lab., Cambridge Univ., UK
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
245
Lastpage
246
Abstract
The formation of self-assembled quantum dots (SAQDs) during the growth of epitaxial materials is of great interest for optical applications due to the high density of dots which can be achieved in comparison with lithographic patterning techniques. Much of the research in this field has been directed towards the systems which display a type-I band alignment such as In(Ga)As/GaAs. In these structures both the electrons and holes are confined within the dots themselves.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; semiconductor quantum dots; 1.3 micron; GaAs-GaSb; electrons; emission; epitaxial materials; holes; photoluminescence spectra; self-assembled GaAs/GaSb quantum dots; type-I band alignment; wavelength; Gallium arsenide; Quantum dots; Sun; Temperature; Time of arrival estimation; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037851
Filename
1037851
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