Natural ordering of ZnO/sub 1-x/Se/sub x/ grown by radical source MBE

Author

Iwata, K. ; Yamada, A. ; Fons, P. ; Matsubara, K. ; Niki, S.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

253

Lastpage

254

Abstract

Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO/sub 1-x/Se/sub x/ anion compound semiconductors. In previous work, the ZnO/sub 1-x/Se/sub x/ bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO.

Keywords

II-VI semiconductors; X-ray diffraction; energy gap; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor growth; zinc compounds; Se incorporation characteristics; ZnO wide bandgap semiconductor crystal; ZnO/sub 1-x/Se/sub x/ bandgap bowing parameter; ZnOSe; bandgap engineering; natural ordering; optoelectrical devices applications; radical source molecular beam epitaxy; Buffer layers; Crystalline materials; Frequency; Kinetic theory; Photonic band gap; Semiconductor materials; Substrates; Wide band gap semiconductors; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037855

Filename

1037855