Title :
PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers
Author :
Mita, Yoh ; Inoue, Masanori ; Sasaki, Shoichiro ; Kuronuma, Ryoichi ; Maruyama, Susumu
Author_Institution :
Dept. of Technol., Tokyo Univ. of Technol., Japan
Abstract :
It has been shown that MBE-grown, Pb-doped ZnSe crystal layers exhibit bright green emission peaking at 550nm wavelength at low temperatures. This broad band emission shows clear superlinear dependence upon exciting 325nm wavelength light intensity. In the investigation periodically or delta-doped crystal layers as well as homogeneously Pb-doped ones are examined.
Keywords :
II-VI semiconductors; lead; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; zinc compounds; 325 nm; 550 nm; MBE-grown, Pb-doped ZnSe crystal layers; ZnSe:Pb; bright green emission; broad band emission; delta-doped crystal layers; exciting wavelength light intensity; periodically doped crystal layers; photoluminescence characteristics; superlinear dependence; wavelength; Argon; Atomic layer deposition; Crystallization; Digital audio players; Doping; Interference; Laser excitation; Temperature dependence; Valves; Zinc compounds;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037856
