DocumentCode
2322580
Title
PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers
Author
Mita, Yoh ; Inoue, Masanori ; Sasaki, Shoichiro ; Kuronuma, Ryoichi ; Maruyama, Susumu
Author_Institution
Dept. of Technol., Tokyo Univ. of Technol., Japan
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
255
Lastpage
256
Abstract
It has been shown that MBE-grown, Pb-doped ZnSe crystal layers exhibit bright green emission peaking at 550nm wavelength at low temperatures. This broad band emission shows clear superlinear dependence upon exciting 325nm wavelength light intensity. In the investigation periodically or delta-doped crystal layers as well as homogeneously Pb-doped ones are examined.
Keywords
II-VI semiconductors; lead; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; zinc compounds; 325 nm; 550 nm; MBE-grown, Pb-doped ZnSe crystal layers; ZnSe:Pb; bright green emission; broad band emission; delta-doped crystal layers; exciting wavelength light intensity; periodically doped crystal layers; photoluminescence characteristics; superlinear dependence; wavelength; Argon; Atomic layer deposition; Crystallization; Digital audio players; Doping; Interference; Laser excitation; Temperature dependence; Valves; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037856
Filename
1037856
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