Growth and characterisation of CdSe:Mn quantum dots

Author

Tang, X. ; Urbaszek, B. ; Graham, T.C.M. ; Warburton, R.J. ; Prior, K.A. ; Cavenett, B.C.

Author_Institution

Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

259

Lastpage

260

Abstract

In this paper, we report the optical properties of CdSe:Mn dots grown by Atomic Layer Epitaxy (ALE). The samples were grown on GaAs substrates with a 150nm buffer of ZnSe deposited by normal MBE. CdSe layers of different thicknesses were deposited by ALE and then capped with ZnSe. Quantum dot emission was observed for CdSe layers more than 3 ML thick. Two sets of layers containing dots have been grown which were doped with Mn to give concentrations ranging from one to approximately ten Mn ions per dot. One set was capped for optical studies and the other left uncapped. For the uncapped samples, dot densities of the order of /spl sim/10/sup 9/ cm/sup -2/ were measured by Atomic Force Microscopy (AFM) measurements obtained immediately after growth (figure 1).

Keywords

II-VI semiconductors; atomic force microscopy; atomic layer epitaxial growth; cadmium compounds; manganese; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; 2.1 to 2.5 eV; AFM measurements; ALE; CdSe:Mn; CdSe:Mn quantum dots; CdSe:Mn-ZnSe-GaAs; GaAs; ZnSe normal MBE buffer; atomic force microscopy measurements; atomic layer epitaxy; optical properties; photoluminescence; Atom optics; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Density measurement; Force measurement; Optical buffering; Quantum dots; Stimulated emission; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037858

Filename

1037858