Title :
Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulphur source
Author :
David, L. ; Bradford, C. ; Tang, X. ; Graham, T.C.M. ; Prior, K.A. ; Cavenett, B.C.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
Abstract :
Many potentially interesting semiconductor compounds do not have the usual zinc blende (ZB) or wurtzite crystal structures as their lowest energy configuration. In some, the atomic coordination number is six, rather than four, and the stable crystal structures are NaCl or NiAs, e.g. the first row transition metal sulphides and other ionic sulphides such as MgS.
Keywords :
II-VI semiconductors; crystal structure; manganese compounds; molecular beam epitaxial growth; semiconductor growth; MnS; MnS heterostructures; S source; ZnS; atomic coordination number; energy configuration; molecular beam epitaxy; stable crystal structures; wurtzite crystal structures; zinc blende crystal structures; Atomic measurements; Buffer layers; Gallium arsenide; Interference; Lattices; Metastasis; Physics; Substrates; Temperature; Zinc compounds;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037859
