Title :
Correlations between growth mode and structural and optical properties of GaInNAs quantum wells grown by MBE
Author :
Chauveau, J.-M. ; Trampert, A. ; Tournie, E. ; Pinault, M.-A. ; Ploog, K.H.
Author_Institution :
Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany
Abstract :
The GaInNAs (GINA) quaternary alloy has been intensively studied in the last years because of its promises for developing GaAs-based long-wavelength laser application. Indeed, high performance GINA-based laser structures have been demonstrated in the range of 1.3 /spl mu/m.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; 1.3 micron; GaAs-based long-wavelength laser application; GaInNAs; GaInNAs quantum wells; X-ray reciprocal space mapping techniques; growth mode; high performance GaInNAs-based laser structures; high-resolution transmission electron microscopy; optical properties; photoluminescence spectroscopy; solid-source MBE; structural properties; Electrons; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser modes; Laser transitions; Molecular beam epitaxial growth; Optical films; Plasma temperature; Transistors;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037861
