A study and control of lattice sites of N and Ga/In/N interdiffusion in dilute nitride quantum wells

Author

Peng, C.S. ; Jouhti, T. ; Pavelescu, E.-M. ; Pessa, M.

Author_Institution

Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

267

Lastpage

268

Abstract

We report on nitrogen incorporation and Ga/In/N interdiffusion in Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y/ / GaAs quantum wells (QW´s) grown at T/sub gr/ /spl ap/ 450/spl deg/C by MBE. We studied effects of the distribution of interstitial and substitutional nitrogen and Ga/In/N interdiffusion on optical properties of the QW´s and the ways of suppressing diffusion. The results are summarised here.

Keywords

III-V semiconductors; X-ray diffraction; chemical interdiffusion; gallium arsenide; indium compounds; interstitials; molecular beam epitaxial growth; photoluminescence; positron annihilation; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; 450 C; Ga/In/N interdiffusion; Ga/sub 1-x/In/sub x/N/sub y/As/sub 1-y//GaAs quantum wells; GaInNAs-GaAs; N incorporation; dilute nitride quantum wells; interstitial N; lattice sites; molecular beam epitaxy; optical properties; substitutional N; Atomic layer deposition; DSL; Gain measurement; Gallium arsenide; Lattices; Nitrogen; Pressing; Rapid thermal annealing; Strain measurement; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037862

Filename

1037862