Valence band structure of GaAsN compounds and band-edge line-up in GaAs/GaAsN/InGaAs heterostructures

Author

Egorov, A.Yu. ; Odnobludov, V.A. ; Zhukov, A.E. ; Nikov, A. F Tsatsu´l ; Krizhanovskaya, N.V. ; Ustinov, V.M. ; Hong, Y.G. ; Tu, C.W.

Author_Institution

A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

269

Lastpage

270

Abstract

We report on the fundamental properties of GaAsN compounds and GaAs/GaAsN/In GaAs heterostructures grown by MBE. The strain-induced splitting of light-hole and heavy-hole bands of tensile strained GaAsN is observed. The space-indirect transition between hole localized in InGaAs and electron localized in GaAsN is detected. The evaluation of the dependence of band gap energy for GaAsN on nitrogen content and band-edge line-up in heterostuctures with GaAsN layer was done from experimental data.

Keywords

III-V semiconductors; band structure; energy gap; gallium arsenide; indium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs-GaAsN; GaAs/GaAsN/InGaAs heterostructures; GaAsN compounds; GaAsN layer; GaAsN-InGaAs; N content; band gap energy; band-edge line-up; heavy-hole bands; light-hole bands; molecular beam epitaxy; space-indirect transition; strain-induced splitting; tensile strained GaAsN; valence band structure; Electrons; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Laser transitions; Nitrogen; Optical materials; Photoluminescence; Photonic band gap; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037863

Filename

1037863