DocumentCode :
2322695
Title :
Nonvolatile memory technology: a view of the future
Author :
Lai, S.
fYear :
2004
fDate :
17-17 Nov. 2004
Firstpage :
129
Abstract :
Summary form only given. Intel´s ETOX flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moves into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. A number of new technologies are proposed as future candidates, including many based on newnano technology concepts reported recently. With memory cost as the value set, the attributes leading to low cost memory are discussed and be used to compare the different new nanomemories. Multi-level, multi-layer and seek and scan memories have the potential to be the lowest cost.
Keywords :
flash memories; nanotechnology; 90 nm; ETOX flash memory; Intel; Moore Law; low cost memory; multilayer memories; multilevel memories; nano memories; nanotechnology age; nine generations; nonvolatile memory; scan memories; seek memories; Costs; Flash memory; Moore´s Law; Nanotechnology; Nonvolatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2004
Conference_Location :
Stanford, CA
Print_ISBN :
0-7803-8726-0
Type :
conf
DOI :
10.1109/NVMT.2004.1380825
Filename :
1380825
Link To Document :
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