• DocumentCode
    2322695
  • Title

    Nonvolatile memory technology: a view of the future

  • Author

    Lai, S.

  • fYear
    2004
  • fDate
    17-17 Nov. 2004
  • Firstpage
    129
  • Abstract
    Summary form only given. Intel´s ETOX flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moves into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. A number of new technologies are proposed as future candidates, including many based on newnano technology concepts reported recently. With memory cost as the value set, the attributes leading to low cost memory are discussed and be used to compare the different new nanomemories. Multi-level, multi-layer and seek and scan memories have the potential to be the lowest cost.
  • Keywords
    flash memories; nanotechnology; 90 nm; ETOX flash memory; Intel; Moore Law; low cost memory; multilayer memories; multilevel memories; nano memories; nanotechnology age; nine generations; nonvolatile memory; scan memories; seek memories; Costs; Flash memory; Moore´s Law; Nanotechnology; Nonvolatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2004
  • Conference_Location
    Stanford, CA
  • Print_ISBN
    0-7803-8726-0
  • Type

    conf

  • DOI
    10.1109/NVMT.2004.1380825
  • Filename
    1380825