High intensity 1.3-1.6/spl mu/m luminescence from MBE grown GaInNAsSb

Author

Gambin, Vincent ; Ha, Wonill ; Wistey, Mark ; Bank, Seth ; Yuen, Homan ; Harris, James ; Kim, Seongsin ; Chamberlin, Danielle ; Rosner, Jeff

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

273

Lastpage

274

Abstract

GaInNAs grown on GaAs substrates has been found to optically emit at wavelengths longer than previously possible on GaAs and may be promising as an active region for use in 1.3 and 1.55/spl mu/m optoelectronic devices. Adding small amounts of nitrogen to InGaAs pushes emission to even longer wavelengths and offsets the In lattice mismatch. Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55/spl mu/m vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optoelectronic devices; photoluminescence; semiconductor growth; surface emitting lasers; 1.3 to 1.55 micron; 1.3 to 1.6 micron; GaAs; GaInNAsSb; In lattice mismatch; dilute nitride GaInNAs alloys; high intensity luminescence; high power edge emitting lasers i; molecular beam epitaxial grown GaInNAsSb; optoelectronic devices; vertical cavity surface emitting lasers; Gallium arsenide; Indium gallium arsenide; Luminescence; Nitrogen; Optical devices; Optoelectronic devices; Power lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037865

Filename

1037865