Title :
High intensity 1.3-1.6/spl mu/m luminescence from MBE grown GaInNAsSb
Author :
Gambin, Vincent ; Ha, Wonill ; Wistey, Mark ; Bank, Seth ; Yuen, Homan ; Harris, James ; Kim, Seongsin ; Chamberlin, Danielle ; Rosner, Jeff
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
GaInNAs grown on GaAs substrates has been found to optically emit at wavelengths longer than previously possible on GaAs and may be promising as an active region for use in 1.3 and 1.55/spl mu/m optoelectronic devices. Adding small amounts of nitrogen to InGaAs pushes emission to even longer wavelengths and offsets the In lattice mismatch. Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55/spl mu/m vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optoelectronic devices; photoluminescence; semiconductor growth; surface emitting lasers; 1.3 to 1.55 micron; 1.3 to 1.6 micron; GaAs; GaInNAsSb; In lattice mismatch; dilute nitride GaInNAs alloys; high intensity luminescence; high power edge emitting lasers i; molecular beam epitaxial grown GaInNAsSb; optoelectronic devices; vertical cavity surface emitting lasers; Gallium arsenide; Indium gallium arsenide; Luminescence; Nitrogen; Optical devices; Optoelectronic devices; Power lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037865
