Title :
Desorption of InAs quantum dots
Author :
Heyn, C. ; Beyer, S. ; Hansen, W.
Author_Institution :
Inst. fur Angewandte Phys., Hamburg Univ., Germany
Abstract :
We study the post-growth lifetime of InAs quantum dots vs. arsenic flux and temperature by electron diffraction and a layer-by-layer desorption model. The results are employed to calculate the In sticking coefficient during growth.
Keywords :
III-V semiconductors; crystal growth from solution; desorption; indium compounds; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum dots; surface morphology; In sticking coefficient; InAs; InAs quantum dots; RHEED intensity; desorption; post-growth lifetime study; Diffraction; Electrons; Indium; Monitoring; Quantum dots; Surface morphology; Switches; Temperature dependence; Time measurement; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037870
