Title :
Customized nanostructures MBE growth: from quantum dots to quantum rings
Author :
Granados, D. ; González, L. ; González, Y. ; Garcia, J.M.
Author_Institution :
Instituto de Microelectron. de Madrid, Spain
Abstract :
Studies for growing control methods of quantum dots (QD) sizes and dot/cap intermixing for tuning QD optical properties have particular interest nowadays. Morphological shape surface changes of QD due to thin capping overgrowth of GaAs under different growing conditions has been reported by different authors [1, 2] as a powerful technique to obtain different nanostructures. In this work, control over shape and optical emission of molecular beam epitaxy (MBE) thin capping overgrown InAs QD on GaAs[100] have been studied, using ex-situ Atomic Force Microscopy (AFM) and Photoluminescence (PL).
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface morphology; 500 to 590 C; GaAs; InAs; MBE; customized nanostructures MBE growth; dot/cap intermixing; ex-situ AFM; ex-situ atomic force microscopy; molecular beam epitaxy thin capping; morphological shape surface changes; photoluminescence; quantum dots; quantum rings; Atom optics; Atomic force microscopy; Molecular beam epitaxial growth; Nanostructures; Optical control; Optical microscopy; Quantum dots; Shape control; Size control; Stimulated emission;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037872
