DocumentCode
2322881
Title
A comparison of MBE- and MOCVD-grown InGaAsN
Author
Ptak, A.J. ; Friedman, D.J. ; Johnston, S.W.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
291
Lastpage
292
Abstract
InGaAsN is a leading candidate for use as a third junction in high-efficiency solar cells, and as a light emitter in the 1.3-1.55 /spl mu/m wavelength range. Despite concentrated effort from many groups over the last several years, material quality continues to be lacking.
Keywords
III-V semiconductors; MOCVD; MOCVD coatings; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor quantum dots; GaAs; GaAs substrates; InGaAsN; InGaAsN MBE/MOCVD growth comparison; capacitance/temperature measurements; hole trap; metalorganic chemical vapor deposition; molecular-beam epitaxy; trap densities; Capacitance; Electron traps; Gallium arsenide; Interference; MOCVD; Molecular beam epitaxial growth; Nitrogen; Photoluminescence; Photovoltaic cells; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037874
Filename
1037874
Link To Document