Title :
Growth temperature and nitrogen composition dependence of growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy
Author :
Makino, S. ; Miyamoto, T. ; Ohta, M. ; Kageyama, T. ; Ikenaga, Y. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The self-assembled In(Ga)As quantum dot (QD) laser have been realized for the long wavelength emission and improvement of laser characteristics. However, In(Ga)As QD lasers still have some problems, such as an increase of threshold at high temperature, and low gain. These problems are due to difficulty in control of the size and the density, which are related to the wavelength and the threshold. The GaInNAs system has been developed as the QW for elongating the emission wavelength. The introduction of the nitrogen (N) into In(Ga)As QDs is an attractive choice because of the possibility of independent control of the wavelength and dot density. In this study, we have investigated the growth characteristics of GaInNAs QDs by CBE in detail.
Keywords :
III-V semiconductors; atomic force microscopy; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; GaAs; GaInNAs-GaAs; GaInNAs/GaAs quantum dots; N composition dependence; chemical beam epitaxy; growth temperature dependence; surface structure; Chemical lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Nitrogen; Quantum dot lasers; Quantum dots; Size control; Temperature dependence;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037875
