• DocumentCode
    2322954
  • Title

    Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser

  • Author

    Paranthoen, C. ; Platz, C. ; Moreau, G. ; Bertru, N. ; Dehaese, O. ; Corre, A. Le ; Miska, P. ; Even, J. ; Folliot, H. ; Labbé, C. ; Simon, J.C. ; Loualiche, S.

  • Author_Institution
    Lab. de Phys. des Solides, Inst. Nat. des Sci. Appliques, Rennes, France
  • fYear
    2002
  • fDate
    15-20 Sept. 2002
  • Firstpage
    301
  • Lastpage
    302
  • Abstract
    In recent years, self assembled quantum dots (QDs) have attracted much attention, because of the great potentialities expected from their zero dimensional confinement properties, especially for the realization of opto-electronic devices such as lasers. Indeed, for a QD based laser, a lower temperature dependence (high T/sub 0/), a lower chirp (/spl alpha//sub H/) and a higher modulation bandwidth are predicted compared to the conventional quantum well lasers. Numerous studies have been performed for the growth of InAs/GaAs QDs, and lasers have been realized, presenting improved performances (T/sub 0/=161 K @ 350 K [1], /spl alpha//sub H/=0 @ 1 GHz [2]).
  • Keywords
    III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; substrates; 1.55 micron; GS-MBE; InAs quantum dots; InAs-InP; InP; InP substrate; capping method; excited state transition; gas source molecular beam epitaxy; optical characterizations; opto-electronic devices; quantum dot laser applications; room temperature PL spectra; threshold optical excitation density; Indium phosphide; Laser excitation; Optical filters; Optical pumping; Pump lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Stimulated emission; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Molecular Beam Epitaxy, 2002 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7581-5
  • Type

    conf

  • DOI
    10.1109/MBE.2002.1037879
  • Filename
    1037879