Title :
The role of stress anisotropy in quantum wire and quantum dot formation
Author :
Silveira, J.P. ; González, M.U. ; García, J.M. ; González, L. ; González, Y. ; Briones, F.
Author_Institution :
Instituto de Microelectron. de Madrid, Spain
Abstract :
Stress relaxation during growth of lattice-mismatched III-V compounds can induce the formation of nanostructures. For interfaces where group-V changes, the formation of either quantum wires or quantum dots has been associated with group-V element exchange process [1]. We demonstrate the importance of the stress anisotropy of the surface structure for the formation of quantum dots or wires.
Keywords :
III-V semiconductors; anisotropic media; gallium arsenide; gallium compounds; indium compounds; reflection high energy electron diffraction; semiconductor heterojunctions; semiconductor quantum dots; semiconductor quantum wires; stress analysis; stress relaxation; surface reconstruction; GaSb-GaAs; GaSb/GaAs surface reconstruction; InAs-InP; MBE growth; RHEED pattern; lattice-mismatched III-V compounds; nanostructures formation; quantum dot formation; quantum wire; stress anisotropy; stress anisotropy role; stress relaxation; surface structure; Anisotropic magnetoresistance; Gallium arsenide; Monitoring; Nanostructures; Quantum dots; Stress measurement; Surface reconstruction; Surface structures; US Department of Transportation; Wire;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037880
