DocumentCode :
2323086
Title :
Application of multistep formation during molecular beam epitaxy for fabricating novel nanomechanical structures
Author :
Yamaguchi, Hiroshi ; Hirayama, Yoshiro
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2002
fDate :
15-20 Sept. 2002
Firstpage :
319
Lastpage :
320
Abstract :
The technique of controlling the surface step distributions during molecular beam epitaxy has been widely used in the fabrication of semiconductor low-dimensional structures. In particular, the multistep structures formed via step bunching during growth are frequently applied for the growth of semiconductor quantum wires. This is a clean fabrication technique for semiconductor nanostructures that does not rely on lithographic processes, which often degrade crystalline quality. Here, we demonstrate, for the first time, the application of this "bottom-up" technique to the fabrication of semiconductor nanomechanical structures, which have the potential to bring about a revolution in the application of nanoscale fine-structure devices, such as high-resolution actuators and sensors, high-frequency signal processing components, and medical diagnostic devices.
Keywords :
III-V semiconductors; atomic force microscopy; elasticity; gallium arsenide; molecular beam epitaxial growth; nanostructured materials; nanotechnology; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; AFM tip; GaAs-Al/sub 0.5/Ga/sub 0.5/As; InAs; elastic properties; high-frequency signal processing components; high-resolution actuators; high-resolution sensors; medical diagnostic devices applications; molecular beam epitaxy; multistep formation application; novel nanomechanical structures fabrication; semiconductor low-dimensional structures; semiconductor nanomechanical structures; semiconductor nanostructures; semiconductor quantum wires growth; stiffness map; Actuators; Crystallization; Degradation; Fabrication; Molecular beam epitaxial growth; Nanoscale devices; Semiconductor nanostructures; Signal processing; Surface cleaning; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037888
Filename :
1037888
Link To Document :
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