DocumentCode
2323118
Title
Performance requirements for power MOSFET models
Author
Budihardjo, Irwan ; Lauritzen, P.O. ; Mantooth, H. Alan
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1994
fDate
20-25 Jun 1994
Firstpage
69
Abstract
The power MOSFET model performance required for accurate waveform simulation is evaluated for most converter circuits. Three models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. A procedure is given for evaluating any proprietary model using data book information with three simple simulations
Keywords
digital simulation; electronic engineering computing; insulated gate field effect transistors; power transistors; semiconductor device models; simulation; C-V plots; converter circuits; gate charge plots; performance requirements; power MOSFET models; waveform simulation; Books; Capacitance-voltage characteristics; Circuit simulation; Impedance; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power system modeling; Pulse width modulation; SPICE; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location
Taipei
Print_ISBN
0-7803-1859-5
Type
conf
DOI
10.1109/PESC.1994.349747
Filename
349747
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