Title :
Performance requirements for power MOSFET models
Author :
Budihardjo, Irwan ; Lauritzen, P.O. ; Mantooth, H. Alan
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The power MOSFET model performance required for accurate waveform simulation is evaluated for most converter circuits. Three models are thoroughly evaluated through C-V plots, gate charge plots, and converter data. A procedure is given for evaluating any proprietary model using data book information with three simple simulations
Keywords :
digital simulation; electronic engineering computing; insulated gate field effect transistors; power transistors; semiconductor device models; simulation; C-V plots; converter circuits; gate charge plots; performance requirements; power MOSFET models; waveform simulation; Books; Capacitance-voltage characteristics; Circuit simulation; Impedance; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power system modeling; Pulse width modulation; SPICE; Switching circuits;
Conference_Titel :
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location :
Taipei
Print_ISBN :
0-7803-1859-5
DOI :
10.1109/PESC.1994.349747
