A precise model for the DC and transient characteristics of BJTs

Author

Bayer, M. ; Kraus, R. ; Hoffmann, K.

Author_Institution

Univ. of Bundeswehr Munich, Neubiberg, Germany

fYear

1994

fDate

20-25 Jun 1994

Firstpage

64

Abstract

This paper presents a circuit model of a BJT based on the calculation of the charge carrier distribution in the base and in the lightly doped collector layer by approximation of the time derivatives. All important phenomena like transient behaviour, emitter and collector recombination, temperature dependence and conductivity modulation are included. Excellent agreement can be observed between simulations and measurements

Keywords

bipolar transistors; electrical conductivity; electron-hole recombination; minority carriers; power transistors; semiconductor device models; transients; BJT; DC characteristics; bipolar junction transistor; charge carrier distribution; conductivity modulation; emitter/collector recombination; lightly doped collector layer; power semiconductor devices; simulation; temperature dependence; time derivatives approximation; transient behaviour; transient characteristics; Charge carrier density; Charge carrier processes; Charge carriers; Circuit simulation; Circuits; Conductivity; Equations; Integrated circuit modeling; Radiative recombination; Steady-state; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE

Conference_Location

Taipei

Print_ISBN

0-7803-1859-5

Type

conf

DOI

10.1109/PESC.1994.349748

Filename

349748