Rules for deriving basic semiconductor region models

We discuss some main rules for deriving power semiconductor device modular models. The method is based on the classical regional hypothesis that parts any power semiconductor device in basic semiconductor regions as: the neutral ohmic region, the gradient-doping neutral region, the high-level injection region, the space-charge region and the field-effect region. But specific rules have to be observed in the model definition in order to obtain reusable models. Then a power semiconductor device model becomes a simple association of several of the basic semiconductor region models: a bond graph. The space charge region model description is covered. Significant results are presented