Title :
Modelling of power semiconductor devices for use in circuit simulations
Author :
Tseng, K.J. ; Palmer, P.R.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The combined use of several modelling techniques and tools to derive realistic models of power semiconductor devices for use in circuit simulations is illustrated using the GTO thyristor as an example. The resulting GTO model uses analytical expressions to describe its internal physics. Direct implementations of these equations in the SPICE and Saber simulators are then used to obtain rigorous comparison of measured and simulated waveforms
Keywords :
SPICE; circuit analysis computing; digital simulation; power electronics; semiconductor device models; thyristors; GTO thyristor; SPICE simulator; Saber simulator; circuit simulations; internal physics; measured waveforms; power semiconductor device modelling; simulated waveforms; Analytical models; Circuit simulation; Design automation; Equations; Physics; Power electronics; Power engineering and energy; Power semiconductor devices; SPICE; Semiconductor process modeling; Solid modeling; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location :
Taipei
Print_ISBN :
0-7803-1859-5
DOI :
10.1109/PESC.1994.349752
