DocumentCode
2323238
Title
A systematic approach to modeling of power semiconductor devices based on charge control principles
Author
Ma, Cliff L. ; Lauritzen, P.O. ; Lin, Pao-Yi ; Budihardjo, I. ; Sigg, J.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1994
fDate
20-25 Jun 1994
Firstpage
31
Abstract
The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic circuit simulation. The resulting models are represented by relatively simple functions which are valid over a wide range of operation
Keywords
circuit analysis computing; digital simulation; insulated gate field effect transistors; power electronics; semiconductor device models; MOS structure; MOSFET; charge control principles; lumped charge modelling; modeling; power electronic circuit simulation; power semiconductor devices; Assembly; Circuit simulation; Equations; Numerical models; Poisson equations; Power electronics; Power semiconductor devices; Power system modeling; Semiconductor diodes; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location
Taipei
Print_ISBN
0-7803-1859-5
Type
conf
DOI
10.1109/PESC.1994.349753
Filename
349753
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