Title :
A systematic approach to modeling of power semiconductor devices based on charge control principles
Author :
Ma, Cliff L. ; Lauritzen, P.O. ; Lin, Pao-Yi ; Budihardjo, I. ; Sigg, J.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic circuit simulation. The resulting models are represented by relatively simple functions which are valid over a wide range of operation
Keywords :
circuit analysis computing; digital simulation; insulated gate field effect transistors; power electronics; semiconductor device models; MOS structure; MOSFET; charge control principles; lumped charge modelling; modeling; power electronic circuit simulation; power semiconductor devices; Assembly; Circuit simulation; Equations; Numerical models; Poisson equations; Power electronics; Power semiconductor devices; Power system modeling; Semiconductor diodes; Semiconductor process modeling; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, PESC '94 Record., 25th Annual IEEE
Conference_Location :
Taipei
Print_ISBN :
0-7803-1859-5
DOI :
10.1109/PESC.1994.349753
