Title :
MBE grown LD arrays with non-absorption window for high peak power output
Author :
Baoxue, Bo ; Yi, Qu ; Xin, Gao ; Ling, Wang ; Hui, Li ; Yuxia, Wang ; Dingsan, Gao ; Du Guotong
Author_Institution :
Nat. Key Lab on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., China
Abstract :
A new nonabsorbing window laser, grown by an interrupted MBE method, has been designed to improve peak power output properties of BA lasers. 5-stack arrays with 2/spl times/0.5 mm/sup 2/ have reached a peak power of 300 W.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor laser arrays; 300 W; AlGaAs-GaAs; InGaAlAs-AlGaAs; InGaAlAs/AlGaAs/GaAs strained material system; broad area lasers; five-stack arrays; interrupted MBE method; molecular beam epitaxy grown laser diodes; nonabsorbing window laser; nonabsorption window; peak power output properties; Biomedical optical imaging; Gallium arsenide; Laser stability; Laser theory; Optical design; Optical pulses; Optical waveguides; Power lasers; Semiconductor laser arrays; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037899
