Title :
Ga/In-intermixing and segregation during InAs quantum dot formation
Author :
Heyn, Ch. ; Beyer, S. ; Hansen, W.
Author_Institution :
Inst. fur Angewandte Phys., Hamburg Univ., Germany
Abstract :
Intermixing with Ga from the substrate and In over Ga segregation during strain-induced formation of InAs quantum dots are studied experimentally with electron diffraction and theoretically by applying a kinetic rate equations based growth model.
Keywords :
III-V semiconductors; electron diffraction; indium compounds; reflection high energy electron diffraction; segregation; semiconductor quantum dots; 450 C; 500 C; Ga/In-intermixing; Ga/In-segregation; InAs quantum dot formation; RHEED experiments; STM; effective lattice mismatch; electron diffraction; electron diffraction experiments; kinetic rate equations; scanning tunneling microscopy; strain induced formation; Electrons; Equations; Gallium; Indium; Kinetic theory; Quantum dots; Substrates; Temperature; Time measurement; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037901
