DocumentCode
2323297
Title
Ga/In-intermixing and segregation during InAs quantum dot formation
Author
Heyn, Ch. ; Beyer, S. ; Hansen, W.
Author_Institution
Inst. fur Angewandte Phys., Hamburg Univ., Germany
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
345
Lastpage
346
Abstract
Intermixing with Ga from the substrate and In over Ga segregation during strain-induced formation of InAs quantum dots are studied experimentally with electron diffraction and theoretically by applying a kinetic rate equations based growth model.
Keywords
III-V semiconductors; electron diffraction; indium compounds; reflection high energy electron diffraction; segregation; semiconductor quantum dots; 450 C; 500 C; Ga/In-intermixing; Ga/In-segregation; InAs quantum dot formation; RHEED experiments; STM; effective lattice mismatch; electron diffraction; electron diffraction experiments; kinetic rate equations; scanning tunneling microscopy; strain induced formation; Electrons; Equations; Gallium; Indium; Kinetic theory; Quantum dots; Substrates; Temperature; Time measurement; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037901
Filename
1037901
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