Emission energy and polarization tuning of InAs/GaAs self-assembled dots by growth interruption

Author

Ochoa, D. ; Polimeni, A. ; Capizzi, M. ; Patane, A. ; Henini, M. ; Eaves, L. ; Main, P.C.

Author_Institution

Dept. of Phys., La Sapienza Univ., Rome, Italy

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

349

Lastpage

350

Abstract

Quantum dots (QDs) are promising heterostructures of nanometric size for applications in optoelectronics and for fundamental studies. A key issue for the full exploitation of self-assembled QDs is the control of their size, shape and density by means of growth conditions. Here we report on the influence of growth interruption time (t/sub i/), growth temperature (T/sub G/), and substrate orientation on the optical properties of InAs/GaAs QDs.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; transmission electron microscopy; 480 C; 5000 C; AFM measurements; InAs-GaAs; InAs/GaAs self-assembled dots; TEM; atomic force microscopy; cross sectional transmission electron microscopy; emission energy; growth Interruption; heterostructures; molecular beam epitaxy; optoelectronics applications; polarization tuning; Atomic force microscopy; Gallium arsenide; Polarization; Quantum dots; Shape control; Shape measurement; Substrates; Temperature; Transmission electron microscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037903

Filename

1037903