Characterization of epitaxial Si/sub 1-y/C/sub y/ layers on Si[001] grown by gas-source molecular beam epitaxy

The strained Si layer is a novel material to improve the electric properties in Si. It provides flexibility in designing band structures of Si devices. An epitaxial Si layer on a relaxed Si/sub 1-x/Ge/sub x/ buffer layer allows this strained structure. However, it is difficult to prepare the buffer layer with a high crystal quality and a flat interface in this system. A tensile strained Si/sub 1-y/C/sub y/ alloy on Si is another candidate to fabricate the strained structure for Si. Additionally, it is simple structure without buffer layer. In this study, we present characteristics of these Si/sub 1-y/C/sub y/ alloy films on Si[001] grown by gas-source molecular beam epitaxy (GS-MBE).