• DocumentCode
    2323385
  • Title

    Performance comparison of static CMOS and MCML gates in sub-threshold region of operation for 32nm CMOS technology

  • Author

    Agarwal, Tarun Kumar ; Sawhney, Anurag ; Kureshi, A.K. ; Hasan, Mohd

  • Author_Institution
    Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh
  • fYear
    2008
  • fDate
    13-15 May 2008
  • Firstpage
    284
  • Lastpage
    287
  • Abstract
    This paper investigates the performance of static CMOS logic circuits and MOS current mode logic (MCML) circuits in sub-threshold region. The simulations are based on 32 nm Berkeley predictive technology model (BPTM) running in HSPICE software. It is found that MCML logic circuits exhibit a decrease in delay and so decrease in overall PDP, which is one of our performance measures, with scaling of input voltage which is contrary to the behavior of static CMOS logic circuits. The results show a propagation delay improvement of more than 10 times when using MCML logic over CMOS logic in sub-threshold region of operation. Further the performance in terms of PDP of MCML logic circuits is improved by a factor of 7-10 when the input voltage is scaled down from 0.4 V to 0.2 V. .The results of various circuit simulations have been illustrated and compared by defining certain performance measures and the trade off between these performance measures.
  • Keywords
    CMOS logic circuits; SPICE; circuit simulation; current-mode circuits; Berkeley predictive technology model; HSPICE software; MCML gates; MOS current mode logic circuits; circuit simulations; size 32 nm; static CMOS logic circuits; sub-threshold region; CMOS logic circuits; CMOS technology; Circuit simulation; Crosstalk; Delay; Inverters; Logic circuits; Logic devices; Predictive models; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer and Communication Engineering, 2008. ICCCE 2008. International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-1691-2
  • Electronic_ISBN
    978-1-4244-1692-9
  • Type

    conf

  • DOI
    10.1109/ICCCE.2008.4580613
  • Filename
    4580613