Title :
Photoluminescence investigation of InAs/GaAs self-assembled quantum dots with 1.3 /spl mu/m room temperature emission
Author :
Songmuang, R. ; Kiravittaya, S. ; Panyakeow, S.
Author_Institution :
Dept. of Electr. Eng., Chulalongkorn Univ., Bangkok, Thailand
Abstract :
In order to apply quantum dots (QD) to the optoelectronic device applications, the optical properties of the structure have to be understood. In this work, we report on the photoluminescence (PL) properties of InAs self-assembled QDs with 1.3 /spl mu/m emission at room temperature. The effects of excitation power and temperature dependence on PL spectra of QDs have been systematically investigated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; 1.3 /spl mu/m room temperature emission; 1.3 micron; InAs-GaAs; InAs/GaAs self-assembled quantum dots; excitation power; optoelectronic device applications; photoluminescence; temperature dependence; Atomic force microscopy; Gallium arsenide; Indium; Land surface temperature; Optical devices; Photoluminescence; Quantum dots; Stationary state; Temperature dependence; US Department of Transportation;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037908
