Control of the coalescence phenomena in InAs/GaAs quantum dots by using high-index planes

Summary form only given. Two different series of samples were examined with atomic force microscopy (AFM). In the first series of structures (S), an InAs layer of average thickness L = 2.3 MLs was deposited on a GaAs buffer layer at a temperature of 500/spl deg/C. Samples with different substrate orientation, i.e. [100]-, [311]B-, [411]B- and [511]A- orientation, were grown in the same run. Samples of the second series (A) were grown in the same way as those in series S, but were thermally annealed at 530/spl deg/C for 90 seconds. We also explore the possibility of using the [311]B QDs for opto-electronic applications by photoluminescence (PL) studies.