Aluminium incorporation for growth optimization of long-wavelength InAs/GaAs quantum dots by molecular beam epitaxy

Author

Wei, Y.-Q. ; Wang, S.M. ; Ferdos, F. ; Zhao, Q.X. ; Vukusic, J. ; Sadeghi, M. ; Larsson, A.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

369

Lastpage

370

Abstract

Summary form only given. We investigate the use of Al in both the lower and the upper embedding layers. We demonstrate that increasing the Al content in the lower InAlGaAs embedding layer increases the QDs density dramatically while introducing a thin InAlAs cap layer can increase the QDs density and also tune the InAs QD ground state emission wavelength to 1.3 /spl mu/m and increase the energy separation between the ground and the first excited state transitions. AFM and PL spectra were used to characterize the QDs.

Keywords

III-V semiconductors; aluminium; atomic force microscopy; excited states; gallium arsenide; ground states; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor growth; semiconductor quantum dots; 1.3 micron; InAlAs; InAlGaAs; InAs-GaAs; aluminium incorporation; growth optimization; long-wavelength InAs/GaAs quantum dots; molecular beam epitaxy; Aluminum; Artificial intelligence; Gallium arsenide; Molecular beam epitaxial growth; Multilevel systems; Photonics; Quantum dots; Stationary state; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037913

Filename

1037913