DocumentCode :
2323500
Title :
Aluminium incorporation for growth optimization of long-wavelength InAs/GaAs quantum dots by molecular beam epitaxy
Author :
Wei, Y.-Q. ; Wang, S.M. ; Ferdos, F. ; Zhao, Q.X. ; Vukusic, J. ; Sadeghi, M. ; Larsson, A.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2002
fDate :
15-20 Sept. 2002
Firstpage :
369
Lastpage :
370
Abstract :
Summary form only given. We investigate the use of Al in both the lower and the upper embedding layers. We demonstrate that increasing the Al content in the lower InAlGaAs embedding layer increases the QDs density dramatically while introducing a thin InAlAs cap layer can increase the QDs density and also tune the InAs QD ground state emission wavelength to 1.3 /spl mu/m and increase the energy separation between the ground and the first excited state transitions. AFM and PL spectra were used to characterize the QDs.
Keywords :
III-V semiconductors; aluminium; atomic force microscopy; excited states; gallium arsenide; ground states; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; semiconductor growth; semiconductor quantum dots; 1.3 micron; InAlAs; InAlGaAs; InAs-GaAs; aluminium incorporation; growth optimization; long-wavelength InAs/GaAs quantum dots; molecular beam epitaxy; Aluminum; Artificial intelligence; Gallium arsenide; Molecular beam epitaxial growth; Multilevel systems; Photonics; Quantum dots; Stationary state; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
Type :
conf
DOI :
10.1109/MBE.2002.1037913
Filename :
1037913
Link To Document :
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