Title :
Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
Author :
Xu, Zhangcheng ; Leosson, Kristjan ; Birkedal, Dan ; Hvam, Jøm M. ; Sadowski, Janusz ; Liu, Yanmei ; Yang, Kuntang ; Zhao, Zongyan ; Chen, Xiaoshuang
Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Abstract :
Summary form only given. We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.
Keywords :
III-V semiconductors; Raman spectra; X-ray diffraction; annealing; gallium arsenide; indium compounds; light polarisation; photoluminescence; self-assembly; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs quantum dots; PL; annealing; high resolution X-ray diffraction; optical properties; polarization dependent PL; resonant Raman scattering; resonant photoluminescence; self-assembly; structure; Annealing; Gallium arsenide; Indium gallium arsenide; Optical polarization; Optical scattering; Photoluminescence; Quantum dots; Raman scattering; Resonance; X-ray diffraction;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037915
