Title :
MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics
Author :
Sadofyev, Yu.G. ; Cao, Y. ; Ramamoorthy, A. ; Naser, B. ; Bird, J.P. ; Johnson, S.R. ; Zhang, Y.H.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum point contacts; semiconductor growth; semiconductor quantum wells; spin polarised transport; 10 nm; 100 nm; 2.4 micron; 2.5 nm; 40 to 30 nm; 480 to 490 C; 570 C; 610 C; InAs-Al(Ga)Sb; InAs/Al(Ga)Sb; MBE growth; high-mobility InAs quantum-well systems; magnetic quantum-point-contact barrier; spin-dependent tunneling; spin-filter device structure; spintronics; Birds; Charge carrier density; Gallium arsenide; Magnetic fields; Magnetoelectronics; Quantum well devices; Quantum wells; Solid state circuits; Surface reconstruction; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037918
