Electrical properties of highly Al-doped ZnSe grown by molecular beam epitaxy

Author

Oh, D.C. ; Chang, J.H. ; Takai, T. ; Song, J.S. ; Kim, J.J. ; Godo, K. ; Park, Y.-G. ; Shindo, K. ; Yao, T.

Author_Institution

Inst. for Mater. Res., Tohoku Univ., Sendai, Japan

fYear

2002

fDate

15-20 Sept. 2002

Firstpage

385

Lastpage

386

Abstract

Conductivity control is one of the most important issues in wide band gap semiconductors such as ZnSe. Recently, we have reported the successful growth of high carrier concentration n-type ZnSe layers doped with Al. However, the carrier compensation mechanisms and limitation of carrier mobility has not been understood yet. In this work, a series of Al doped ZnSe samples were grown on semi-insulating [001] GaAs substrate by molecular beam epitaxy (MBE). High resolution X-ray diffraction (HRXRD) measurements were performed to investigate the doping induced structural changes. Optical properties of deep/near band emission were investigated by photoluminescence (PL). The electrical properties were investigated by Hall measurement at the elevating temperature.

Keywords

Hall effect; II-VI semiconductors; X-ray diffraction; aluminium; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; zinc compounds; Hall effect; X-ray diffraction; ZnSe:Al; carrier compensation mechanisms; deep/near band emission; doping induced structural changes; electrical properties; high carrier concentration; molecular beam epitaxy; photoluminescence; wide band gap semiconductors; Conductivity; Doping; Gallium arsenide; Molecular beam epitaxial growth; Optical diffraction; Performance evaluation; Substrates; Wide band gap semiconductors; X-ray diffraction; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Molecular Beam Epitaxy, 2002 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7581-5

Type

conf

DOI

10.1109/MBE.2002.1037921

Filename

1037921